| 1. | In photodetectors the wavelength response is not uniform at all wavelengths, but a threshold energy exists, determined by the semiconductor energy gap between bound and free carriers .
光子探测器对不同波长的分光响应是不同的，但是存在一个由束缚和自由载流子之间的半导体能隙所确定的能阈。 |
| 2. | This indicates the existence of the second energy gap
这预示着第二个超导能隙的出现。 |
| 3. | Optical absorption measurements show that mnxcd1 - xin2te4 is a direct energy gap semiconductor and the band gap shifts towards the high energy side with the increase of x
采用光吸收法测得mn人d n 。 te 。晶体属于直接带隙半导体，其能隙eg随着组分互的增加线性增大。 |
| 4. | With the prolongation of the annealing time at 400 " c and sokpa , the energy gap and the electrical resistivity increase and all the thin films trend to n - type semiconductors
400 、 80kpa硫化时，薄膜均呈n型导电特性，而且随着硫化时间的延长，薄膜禁带宽度及电阻率增大。 |
| 5. | In the chapter five , we study the quasi particle excitation energy spectrum and corresponding energy gap in ferromagnetic ( 1 / 2 , 1 ) tow - leg heisenberg ladder system
准一维磁性系统热力学性质的研究摘要第五章中，我们研究了亚铁磁双链ow legheisenbergladder ）系统中的元激发谱和能隙。 |
| 6. | The single crystal si is an undirected band gap semiconductor and its energy gap is 1 . 11ev . as the luminescent material at the application in photoelectric field single crystal si is limited
单晶硅是间接带隙半导体材料，它的带隙宽度eg = 1 . 1ev ，作为发光器件材料在光电子领域中的应用受到一定限制。 |
| 7. | Moreover , the energy gap increasing with the film thickness when that is in the range of 70 - 130nm while the energy gap decreases with the film thickness when that is above 130nm
当薄膜厚度小于130nm时，薄膜厚度增加可导致其禁带宽度上升，当薄膜厚度大于130nm时，薄膜厚度增大反而会导致禁带宽度下降。 |
| 8. | The method and some simple and important results are presented . in the second chapter , we study the ground state energy gap and the spin - peierls phase transition in the quasi one - dimensional spin = l / 2 dimerized anti - ferromagnetic single chain
第二章中，我们研究准一维自旋s = 1 / 2的二聚化反铁磁单链的基态能隙和低温下的spin - peierls相变。 |
| 9. | Tio2 film is antibacterial through photocatalysis . the silver doped tio2 film baffle the separate of electron and cavity , change the energy gap ' s framework of tio2 , and improve its activity performance of photocatalysis
二氧化钛薄膜是光催化抗菌，掺银二浙江人学帧卜论义氧化钛薄膜阻止光生电子一光生空穴的分离，改变了tioz的能带结构，提高了它的光催化活性。 |
| 10. | We find it has the same behavior as that of the continuous phase transition in bcs super - conduction theory : the nonzero ground state energy gap decreases to zero at the finite critical temperature tsp , and the specific heat takes on divergence
我们发现该相变同bcs理论的连续相变极为相似：基态非零的能隙在有限的临界温度t _ ( sp )处降低为零，而比热呈现出趋于无穷的发散。 |
